Dynamic SIMS
Suitable for analysis of glass, metal, ceramics, silicon, compound semiconductors, shallow implants, and more!
"Dynamic SIMS" is a secondary ion mass spectrometry method that can detect trace amounts of all elements (from H to U) in samples with high sensitivity, ranging from ppm to ppb. It allows for qualitative analysis and depth profiling, and additionally enables high-precision quantitative analysis using standard samples (conducted at our partner company). The minimum beam diameter is approximately 30 µm, and it can be further reduced depending on the material. [Features] ■ Automatic loading/unloading of samples, high throughput (24 samples/load) ■ Unmatched depth profiling capability and high depth resolution, wide dynamic range ■ Optimized for the analysis of glass, metals, ceramics, silicon, compound semiconductors, shallow implants, etc. ■ Best detection limit: from ppm to ppb (10^-6 to 10^-9) *For more details, please refer to the PDF document or feel free to contact us.
- Company：アイテス
- Price：Other
